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2SBA42 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2SBA42
Description  NPN Plastic Encapsulated Transistor
PDF  1 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SBA42 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2SBA42 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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2SBA42
0.2 A, 310 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
15-Nov-2012 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1
Base
3
Emitter
Collector
24
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
The 2SBA42 is designed for applications as a video output
to drive color CRT, or as a dialer circuit in electronics telephone.
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-89
1K
13’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
310
V
Collector-Emitter Voltage
VCEO
305
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
0.2
A
Collector Current -Pulsed
ICM
0.5
A
Collector Power Dissipation
PD
0.5
W
Thermal Resistance from Junction to Ambient
RθJA
250
°C / W
Junction & Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
310
-
-
V
IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
305
-
-
V
IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V
IE=100µA, IC=0
Collector cut-off current
ICBO
-
-
0.25
µA
VCB=200V, IE=0
Collector cut-off current
ICEO
-
-
0.25
µA
VCE=200V, IB=0
-
-
5
VCE=300V, IB=0
Emitter cut-off current
IEBO
-
-
0.1
µA
VEB=5V, IC=0
DC current gain
hFE(1)
60
-
-
VCE=10V, IC=1mA
hFE(2)
100
-
300
VCE=10V, IC=10mA
hFE(3)
75
-
-
VCE=10V, IC=30mA
Collector-emitter saturation voltage
VCE(sat)
-
-
0.2
V
IC=20mA, IB=2mA
Base-emitter saturation voltage
VBE(sat)
-
-
0.9
V
IC=20mA, IB=2mA
Transition frequency
f T
50
-
-
MHz
VCE=20V, IC=10mA,
f=30MHz
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
4.40
4.60
G
0.40
0.58
B
3.94
4.25
H
1.50
TYP
C
1.40
1.60
J
3.00
TYP
D
2.30
2.60
K
0.32
0.52
E
1.50
1.70
L
0.35
0.44
F
0.89
1.20
SOT-89
A
E
C
D
B
K
H
F
G
L
J
1
2
3
4
A42


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