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BCP5401 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP5401 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual BCP5401 PNP Epitaxial Planar Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 1.BASE 2.COLLECTOR 3.EMITTER ABSOLUTE MAXIMUM RATINGS (Tamb=25 C, unless otherwise specified) o P Symbol Value Unit arameter Collector-Base Voltage VCBO -160 V V V mA W C o Collector-Emitter Voltage VCEO VEBO -5 Emitter-Base Voltage -600 PD IC 1 Collector Current Total Power Dissipation Operating Junction and Storage Temperature TJ,TSTG +150,-55 ~ +150 -150 ELECTRICAL CHARACTERISTICS (Tamb=25 C) o P Symbol Min. Typ. Max. Unit Test Conditions arameter Collector-Base Breakdown Voltage IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=-1mA IC VCB=-10V, f=1MHz BVCBO -160 V Collector-Emitter Breakdown Voltage BVCEO BVEBO V V -5 nA Emitter-Base Breakdown Voltage nA ICBO IEBO V 1 CE(sat) - - - - - - - - - - - - - - - - - -500 -200 -50 -50 mV mV Collector Cut-off Current Emitter Cut-off Current Output Capacitance -150 IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V,IC=-10mA, f=100MHz 60 50 VBE(sat)2 hFE1 hFE2 hFE3 fT - - - - - - - - 50 240 -1 MHz V Base-Emitter Voltage DC Current Gain Transition Frequency V 2 CE(sat) Collector-Emitter Saturation Voltage =-50mA, IB =-5mA Cob VBE(sat)1 - 6 pF - 100 -1 V IC=-10mA, IB=-1mA Marking:54 XXXX (xxxx = Date Code) 01 Designed for gereral prupose application requiring high breakdown voltage. 01-Jun-2002 Rev. A Page 1 of 2 1 2 3 Features SOT-89 REF. Min. Max. REF. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. M 0.70 REF. RoHS Compliant Product |
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