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ESM412008 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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ESM412008 Datasheet(HTML) 2 Page - Dynex Semiconductor |
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2 / 8 page  ESM4120 2/8 SURGE RATINGS Conditions Max. Units 4.5 kA 101 x 103 A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM Parameter Symbol 10ms half sine; with 0% V RRM, Tj = 125 oC 3.6 kA 64.8 x 103 A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM 10ms half sine; with 50% V RRM, Tj = 125 oC THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W - 0.133 Anode dc Clamping force 3.5kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.02 Double side - Single side Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter - 0.04 oC/W oC/W Cathode dc - 0.147 oC/W Double side cooled - 0.07 oC/W T stg Storage temperature range -55 125 oC kN 4.0 3.0 Clamping force - T vj Virtual junction temperature On-state (conducting) - 125 oC Min. |
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