GP1200FSS18

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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FEATURES

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Non Punch Through Silicon

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Isolated Copper Baseplate

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Low Inductance Internal Construction

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1200A Per Module

APPLICATIONS

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High Power Inverters

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Motor Controllers

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Induction Heating

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Resonant Converters

The powerline range of high power modules includes dual

and single switch configurations covering voltages from 600V to

3300V and currents up to 4800A.

The GP1200FSS18 is a single switch 1800V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP1200FSS18

Note: When ordering, please use the whole part number.

KEY PARAMETERS

V

CES

1800V

V

CE(sat)

(typ)

3.5V

I

C

(max)

1200A

I

C(PK)

(max)

2400A

GP1200FSS18

Single Switch IGBT Module

Replaces February 2000 version, DS5260-2.0

DS5260-3.1 January 2001

Fig. 1 Single switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: F

(See package details for further information)

C2

C1

Aux C

G

Aux E

E1

E2

External connection

External connection

C1

E1

C2

E2

G

Aux E

Aux C