GP801DCM18

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

FEATURES

s

Low V

CE(SAT)

s

800A Per Module

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High Thermal Cycling Capability

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Non Punch Through Silicon

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Isolated MMC Base with AlN Substrates

APPLICATIONS

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High Reliability

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Motor Controllers

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Traction Drives

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Low Loss System Retrofit

The Powerline range of high power modules includes dual

and single switch configurations covering voltages from 1200V to

3300V and currents up to 4800A.

The GP801DCM18 is an 1800V, n channel enhancement

mode, insulated gate bipolar transistor (IGBT) chopper module.

Designed with low V

CE(SAT)

to minimise conduction losses, the

module is of particular relevance in low to medium frequency

applications. The IGBT has a wide reverse bias safe operating

area (RBSOA) ensuring reliability in demanding applications.

This device is optimised for traction drives and other applications

requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP801DCM18

Note: When ordering, please use the complete part number.

KEY PARAMETERS

V

CES

1800V

V

CE(sat)

(typ)

2.6V

I

C

(max)

800A

I

C(PK)

(max)

1600A

GP801DCM18

Hi-Reliability Chopper Switch Low V

DS5365-3.0 January 2001

Fig. 1 Dual switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: D

(See Package Details for further information)

3(C

4(E

2(C

1(E

GPxxxDCxxx-xxx