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MDFB5125 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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MDFB5125 Datasheet(HTML) 5 Page - Dynex Semiconductor |
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5 / 8 page ![]() MDFB51 5/8 1 10 100 1000 Rate of rise of reverse current, dIR/dt - (A/µs) 1000 100 10000 100000 A: IF = 4000A B: IF = 2000A C: IF = 1000A D: IF = 500A E: IF = 200A F: IF = 100A A B C D E F IRR QS tp = 1ms IF dIR/dt QS = ∫ Conditions: Tj = 150˚C, VR = 100V 50 µs 0 1 10 100 1000 Rate of rise of reverse current, dIR/dt - (A/µs) 100 10 1000 10000 Conditions: Tj = 150˚C, VR = 100V A: IF = 4000A B: IF = 2000A C: IF = 1000A D: IF = 500A E: IF = 200A F: IF = 100A A B D E F C Figure 4 Recovered charge Figure 5 Maximum reverse recovery current vs rate of fall of forward current |
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