2SC5408 datasheet(2/8 Pages) NEC

2 / 8 page

2SC5408

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC Current Gain

hFE

VCE = 2 V, IC = 7 mA Note 1

140

Gain Bandwidth Product

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

GHz

Feed-back Capacitance

Cre

VCB = 2 V, IE = 0, f = 1 MHz Note 2

0.1

0.15

Insertion Power Gain

|S21e|2

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

15.5

Noise Figure

VCE = 2 V, IC = 1 mA, f = 2.0 GHz

1.1

1.8

Rank

Marking

T1E

hFE

70 to 40

Notes 1. Pulse measurement PW

≤ 350

µs, duty cycle ≤ 2 %, pulsed

2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.

TYPICAL CHARACTERISTICS (TA = 25

°C)

200

100

200

180

160

140

120

100

1.0

2.0

3.0

100

150

0.5

1.0

TA - Ambient Temperature - °C

30 mW

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT

vs. BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT

vs. COLLECTOR TO EMITTER VOLTAGE

VBE - Base to Emitter Voltage - V

VCE - Collector to Emitter Voltage - V

VCE = 2 V

IB = 20

500

100

200

100

DC CURRENT GAIN vs.

COLLECTOR CURRENT

IC - Collector Current - mA

VCE = 1 V

VCE = 2 V

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