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MP04HB910 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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MP04HB910 Datasheet(HTML) 1 Page - Dynex Semiconductor |
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1 / 7 page ![]() 1/7 www.dynexsemi.com MP04HB910 FEATURES s Dual Device Module s Electrically Isolated Package s Pressure Contact Construction s International Standard Footprint s Alumina (Non-toxic) Isolation Medium APPLICATIONS s Power Supplies s Large IGBT Circuit 'Front Ends' s Rectifiers s Battery Chargers VOLTAGE RATINGS KEY PARAMETERS V RRM 3000V I F(AV) 915A I FSM (per arm) 20000A I F(RMS) 1440A V isol 3000V 3000 2800 2600 2400 MP04HB910-30 MP04HB910-28 MP04HB910-26 MP04HB910-24 Conditions T vj = –40˚ to 150˚C, V RSM = VRRM + 100V Lower voltage grades available Type Number Repetitive Peak Voltages V DRM VRRM V Fig.1 HB circuit configuration ORDERING INFORMATION Order As: MP04HB910-XX XX shown in the part number about represents V RRM/100 selection required. Note: When ordering, please use the complete part number. Please quote full part number in all correspondance. 1 2 3 MP04HB910 Dual Rectifier Diode Module Preliminary Information DS5425-1.2 February 2001 Fig. 2 Electrical connections - (not to scale) Outline type code: MP04 (See package details for further information) |
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