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STD830CP40 Datasheet(PDF) 2 Page - STMicroelectronics |
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STD830CP40 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Electrical ratings STD830CP40 2/10 Doc ID 15767 Rev 3 1 Electrical ratings Note: For PNP types voltage and current values are negative Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN PNP VCBO Collector-base voltage (IE = 0) 700 500 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 1.5 A, tp < 10 ms) V(BR)EBO V IC Collector current 3 A ICM Collector peak current (tP < 5 ms) 6 A IB Base current 1.5 A IBM Base peak current (tP < 1 ms) 3 A PTOT Total dissipation at Tamb = 25 °C single transistor 3 W PTOT Total dissipation at Tcase = 25 °C single transistor 45 W TSTG Storage temperature -65 to 150 °C TJ Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJA (1) 1. When mounted on 25mm square pad of 2 oz. copper, t ≤10 sec. Thermal resistance junction-ambient (single transistor) 42 °C/W RthJC (1) Thermal resistance junction-case (single transistor) 2.7 °C/W |
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