8

Broadband RF Power MOSFET

600W, to 80MHz, 50V

M/A-COM Products

Released - Rev. 07.07

MRF154

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

CIRCUIT CONSIDERATIONS

At high power levels (500 W and up), the circuit layout

becomes critical due to the low impedance levels and high

RF currents associated with the output matching. Some of

the components, such as capacitors and inductors must

also withstand these currents. The component losses are

directly proportional to the operating frequency. The manu-

facturers

specifications on capacitor ratings should be consulted on

these aspects prior to design.

Push–pull circuits are less critical in general, since the

ground referenced RF loops are practically eliminated, and

the impedance levels are higher for a given power output.

High power broadband transformers are also easier to de-

sign than comparable LC matching networks.