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SBESD9N5C Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SBESD9N5C Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() Elektronische Bauelemente SBESD9N5C 48W, 5V Ultra Low Capactance ESD Protection for high-speed interfaces 21-Apr-2014 Rev. C Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Units Reveres maximum working voltage VRWM - - 5 V Reveres leakage current IR VRWM=5V - - 1 μA Reveres breakdown voltage VBR IT=1mA 7 8.5 10 V IPP=1A, tp=8/20us - - 11.5 V Clamping Voltage VC IPP=3A, tp=8/20us - - 16 V Junction capacitance CJ f=1MHz, VR=0 - 0.45 0.7 pF RATINGS AND CHARACTERISTICS CURVES |
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