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BYW95B Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BYW95B Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() BYW95A - BYW95C AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES PRV : 200 - 600 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.11 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BYW95A BYW95B BYW95C UNITS Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 Volts Maximum Continuous Reverse Voltage VR 200 400 600 Volts Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA V(BR)R-min 300 500 700 Volts Maximum Average Forward Current Ttp= 60 °C (Note 1) IF(AV) 3.0 Amps. Maximum Non-Repetitive Peak Forward Surge Current IFSM 70 Amps. Maximum Repetitive Peak Forward Current IFRM 15 Amps. Maximum Forward Voltage at IF = 5.0 Amps. VF 1.5 Volts Maximum Reverse Current at Reverse Voltage IR 5.0 µA Maximum Reverse Current at Reverse Voltage Tj = 165 °C IR(H) 150 µA Maximum Reverse Recovery Time (Note 2) Trr 250 ns Thermal Resistance - Junction to Ambient R θJA 75 K / W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Lead Length 10 mm. (2) Measured w ith IF = 1 Amp to VR ≥ 30V UPDATE : APRIL 23, 1998 RATING DO-201AD 0.21 (5.33) 0.19 (4.82) 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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