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EMT1 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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EMT1 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  EMT1 Dual PNP Plastic-Encapsulated Transistors Elektronische Bauelemente 07-Dec -2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Mounting Possible With SOT-563 Automatic Mounting Machines. Transistor elements are independent, eliminating interference. MARKING T1 PACKAGE INFORMATION Package MPQ Leader Size SOT-563 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current – Continuous IC -150 mA Collector Power Dissipation PC 150 mW Junction & Storage temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO -60 - - V IC= -50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -6 - - V IE= -50µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µ A VCB= -60V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 µ A VEB= -7V, IC=0 DC Current Gain hFE 120 - 560 VCE= -6V, IC= -1mA Collector-Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -50mA, IB= -5mA Transition Frequency fT - 140 - MHz VCE= -12V, IC= -2mA, f=100MHz Collector Output Capacitance Cob - - 5 pF VCB= -12V, IE=0, f=1MHz SOT-563 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.600 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E 0.05 REF. E F J B C D G A H |
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