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KTC1027 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KTC1027 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page ![]() KTC1027 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 11-Dec-2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E F D B G H J K 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC1027-O KTC1027-Y Range 80~160 120~240 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Continuous Collector Current IC 0.8 A Collector Power Dissipation PC 0.75 W Thermal Resistance RθJA 167 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 120 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 120 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut - Off Current ICBO - - 0.1 µA VCB=120V, IE=0 Emitter cut-off current IEBO - - 0.1 µA VEB=5V, IC=0 DC Current Gain hFE 80 - 240 VCE=5V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=0.5A, IB=50mA Base – Emitter Voltage VBE - - 1 V VCE=5V, IC=500mA Collector Output Capacitance Cob - - 30 pF VCB=10V, IE=0, f=1MHz Transition Frequency fT - 120 - MHz VCE=5V, IC=100mA 1 1 1 1Emitter 2 2 2 2Collector 3 3 3 3Base REF. Millimeter Min. Max. A 4.70 5.10 B 7.80 8.20 C 13.80 14.20 D 3.70 4.10 E 0.35 0.55 F 0.35 0.45 G 1.27 TYP. H 1.28 1.58 J 2.44 2.64 K 0.60 0.80 TO-92L |
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