SSP7444N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSP7444N

34A, 40V, RDS(ON) 3 mΩ

Ω

N-Channel Enhancement MOSFET

27-Nov-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±20V

VDS=32V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=32V, VGS=0,TJ=55°C

On-State Drain Current

ID(ON)

VDS=5V, VGS=10V

VGS=10V, ID=20A

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=16A

Forward Transconductance

gFS

VDS=15V,,ID=20A

Diode Forward Voltage

VSD

0.69

IS=4.1A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID=20A

VDS=20V

VGS=4.5V

Turn-On Delay Time

Td(ON)

Rise Time

Turn-Off Delay Time

Td(OFF)

209

Fall Time

ID=20A, VDS=20V

VGEN=10V

RL=1 , RGEN=6

Input Capacitance

Ciss

6861

Output Capacitance

Coss

791

Reverse Transfer Capacitance

Crss

653

VDS=15V, VGS=0, f=1MHz

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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