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MAHE1J Datasheet(PDF) 1 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
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MAHE1J Datasheet(HTML) 1 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
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1 / 3 page  MAHE1A~MAHE1M Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junctions ● Ultrafast reverse recovery time ● Low switching losses, high efficiency ● High forward surge capability ● High temperature soldering： 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Major Ratings and Characteristics Mechanical Date ● Case: JEDEC MSMA molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D ● Polarity: Laser band denotes cathode end IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50nS, 75nS VF 1.0 V, 1.3 V, 1.7 V Tj max. 150 °C y Maximum Ratings & Thermal Characteristics (TA = 25 °C unless otherwise noted) Note 1: Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas. Electrical Characteristics (TA = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. j Items Symbol MAHE 1A MAHE 1B MAHE 1D MAHE 1G MAHE 1J MAHE 1K MAHE 1M UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Thermal resistance from junction to lead (1) RθJL 35 ℃ /W Operating junction and storage temperature range TJ，TSTG –55 to +150 ℃ Items Test conditions Symbol MAHE1A~ MAHE1D MAHE1G MAHE1J~ MAHE1M UNIT Instantaneous forward voltage IF=1.0A (2) VF 1.0 1.3 1.7 V Reverse current VR=VDC TA=25℃ TA=125℃ IR 5 100 μA Reverse recovery time IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A trr 50 75 nS Typical junction capacitance 4.0V,1.0MHz CJ 15 10 pF Surface Mount Ultra Fast Rectifiers http://www.trr-jx.com |
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