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IRF7410GPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7410GPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7410GPbF 2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Surface mounted on 1 in square Cu board, t ≤ 10sec. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.006 ––– V/°C ––– ––– 7 ––– ––– 9 ––– ––– 13 VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -3.09 ––– mV/°C gfs Forward Transconductance 55 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -25 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 Qg Total Gate Charge ––– 91 Qgs Gate-to-Source Charge ––– 18 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 25 td(on) Turn-On Delay Time ––– 13 20 tr Rise Time ––– 12 18 td(off) Turn-Off Delay Time ––– 271 407 tf Fall Time ––– 200 300 Ciss Input Capacitance ––– 8676 ––– Coss Output Capacitance ––– 2344 ––– Crss Reverse Transfer Capacitance ––– 1604 ––– Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 97 145 ns TJ = 25°C IF = -2.5A Qrr Reverse Recovery Charge ––– 134 201 µC di/dt = -100A/µs d RDS(on) Static Drain-to-Source On-Resistance ––– ––– ––– ––– -2.5 -65 ns pF A VGS = -2.5V, ID = -13.6A d VGS = -1.8V, ID = -11.5A d VDS = VGS, ID = -250µA m Ω µA nA nC VDS = -10V, ID = -16A ID = -16A VGS = -8V VGS = 8V MOSFET symbol showing the VDS =-9.6V Conditions RG = 6Ω d VGS = 0V VDS = -10V ƒ = 1.0 MHz TJ = 25°C, IS = -2.5A, VGS = 0V d integral reverse p-n junction diode. Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -16A d VDS = -9.6V, VGS = 0V VDS = -9.6V, VGS = 0V, TJ = 70°C ID =-1.0A RD = 6Ω VGS = -4.5V d VDD = -6V VGS = -4.5V |
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