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RBV5000 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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RBV5000 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 5000 RBV 5001 RBV 5002 RBV 5004 RBV 5006 RBV 5008 RBV 5010 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55 °C IF(AV) 50 Amps. Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 400 Amps. Current Squared Time at t < 8.3 ms. I 2t 660 A 2S Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) R θJC 1.5 °C/W Operating Junction Temperature Range TJ 10 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : 1. Thermal Resistance from junction to case w ith units mounted on heatsink. UPDATE : AUGUST 3, 1998 RATING RBV25 Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 ~ ∅ 3.2 ± 0.1 ~ 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 10 ±0.2 + 7.5 ±0.2 |
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