SMG3402 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMG3402

N-Ch Enhancement Mode Power MOSFET

4.6 A, 30 V, RDS(ON), 30 mΩ

Ω

01-December-2008 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS = 0, ID = 250 uA

Gate Threshold Voltage

VGS(th)

1.0

2.5

VDS = VGS, ID = 250 µA

Forward Transconductance

gfs

VDS = 5 V, ID = 4.6 A

Gate-Source Leakage Current

IGSS

±100

VGS = ±20 V

Drain-Source Leakage Current(Tj=25℃)

VDS = 30 V, VGS = 0

Drain-Source Leakage Current(Tj=55℃)

IDSS

VDS = 24 V, VGS = 0

VGS = 10 V, ID = 4.6 A

Static Drain-Source On-Resistance

RDS(ON)

VGS = 4.5 V, ID = 4.0 A

Total Gate Charge

15.8

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

ID = 4.6 A

VDS = 15 V

VGS = 10 V

Turn-on Delay Time

Td(on)

4.8

Rise Time

3.9

Turn-off Delay Time

Td(off)

27.7

Fall Time

5.5

VDS = 15 V

ID = 1 A

VGS = 10 V

RG = 6

RL = 15

Input Capacitance

Ciss

782

Output Capacitance

Coss

135

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = 15 V

f = 1.0 MHz

SOURCE-DRAIN DIODE

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage

VSD

1.2

IS= 1.25 A, VGS=0V

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Surface mounted on 1in

2 copper pad of FR4 board; 270°C/W when mounted on Min. copper pad.

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