SMS3415 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS3415

-4A , -20V , RDS(ON) 50 mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

31-Oct-2013 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-0.3

-1

VDS=VGS, ID= -250µA

±10

VGS= ±8V, VDS=0

Gate-Source Leakage Current

IGSS

±1

µA

VGS= ±4.5V, VDS=0

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -16V, VGS=0

Forward Transconductance

gfs

VDS= -5V, ID= -4A

Diode Forward Voltage

VSD

-1

IS= -1A, VGS=0

VDS= -4.5V, ID=-4A

VGS= -2.5V, ID= -4A

Static Drain-Source On-Resistance

RDS(ON)

VGS= -1.8V, ID= -2A

Switching Parameters

Total Gate Charge

17.2

Gate-Source Charge

Qgs

1.3

Gate-Drain Change

Qgd

4.5

ID= -4A

VDS= -10V

VGS= -4.5V

Turn-on Delay Time

Td(on)

9.5

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS= -10V

VGS= -4.5V

RGEN=3

RL=2.5

Dynamic Parameters

Input Capacitance

Ciss

1450

Output Capacitance

Coss

205

Reverse Transfer Capacitance

Crss

160

VGS =0

VDS= -10V

f =1.0MHz

Gate Resistance

6.5

VGS= VDS=0, f =1.0MHz

Note:

Repetitive rating, pulse width limited by junction temperature.

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

These parameters have no way to verify.

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