Elektronische Bauelemente

SSD50N10

N-Ch Enhancement Mode Power MOSFET

19-Oct-2012 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

100

-

-

V

Gate-Threshold Voltage

2.5

-

4.5

V

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

μA

Static Drain-Source On-Resistance

2

-

18

22

mΩ

Total Gate Charge

2

-

27.6

-

Gate-Source Charge

-

11.4

-

Gate-Drain (“Miller”) Change

-

7.9

-

nC

Turn-on Delay Time

2

-

15.6

-

Rise Time

-

17.2

-

Turn-off Delay Time

-

16.8

-

Fall Time

-

9.2

-

nS

Input Capacitance

-

1890

-

Output Capacitance

-

268

-

Reverse Transfer Capacitance

-

67

-

pF

f =1.0MHz

Gate Resistance

1.9

3.8

Ω

f=1MHz

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

53

-

-

mJ

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1,6

-

-

45

A

Pulsed Source Current

2,6

-

-

100

A

Reverse Recovery Time

-

34

-

nS

Reverse Recovery Charge

-

47

-

nC

Notes:

2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%

4. The power dissipation is limited by 150°C, junction temperature

5. The Min. value is 100% EAS tested guarantee.