SSG4396N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4396N

4.4A, 150V, RDS(ON) 110mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

13-Nov-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS=±20V

VDS=120V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=120V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

6.6

VDS=5V, VGS=10V

110

VGS=10V, ID=3.5A

Drain-Source On-Resistance

RDS(ON)

115

VGS=5.5V, ID=2.8A

Forward Transconductance

gfs

VDS=15V, ID=3.5A

Diode Forward Voltage

VSD

0.72

IS=2.3A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

6.7

Gate-Drain Charge

Qgd

8.9

ID=3.5A

VDS=75V

VGS=5.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD=75V

ID=3.5A

VGEN=10V

RL= 21.5

RGEN=6

Input Capacitance

Ciss

2599

Output Capacitance

Coss

167

Reverse Transfer Capacitance

Crss

VDS=15V

VGS=0V

f=1MHz

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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