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RM10Z Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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RM10Z Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() RM10 - RM10Z SILICON RECTIFIER DIODES PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RM10Z RM10 RM10A RM10B UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 Volts Maximum RMS Voltage VRMS 140 280 420 560 Volts Maximum DC Blocking Voltage VDC 200 400 600 800 Volts Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C IF 1.5 1.2 Amps. Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 120 150 Amps. Maximum Forward Voltage at IF = 1.5 Amps. VF 0.91 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Typical Junction Capacitance (Note1) CJ 30 pF Typical Thermal Resistance (Note2) R θJA 50 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. UPDATE : MAY 27, 1998 RATING 0.034 (0.86) 0.028 (0.71) D2 0.161 (4.10) 0.154 (3.90) Dimensions in inches and ( millimeters ) 0.284 (7.20) 0.268 (6.84) 1.00 (25.4) MIN. 1.00 (25.4) MIN. |
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