NE856M13

NPN SILICON TRANSISTOR

•

NEW MINIATURE M13 PACKAGE:

– Small transistor outline –

1.0 X 0.5 X 0.5 mm

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

•

LOW NOISE FIGURE:

NF = 1.4 dB at 1 GHz

•

HIGH COLLECTOR CURRENT:

FEATURES

PACKAGE OUTLINE M13

PRELIMINARY DATA SHEET

PART NUMBER

NE856M13

2SC5614

PACKAGE OUTLINE

M13

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

GHz

3

4.5

NF

dB

1.4

2.5

dB

7

10

80

145

µA1

µA1

pF

0.7

1.5

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

California Eastern Laboratories

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width

≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

DESCRIPTION

The NE856M13 transistor is designed for low cost amplifier

and oscillator applications. Low noise figure, high gain and high

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/flat lead style "M13" package

is ideal for today's portable wireless applications. The NE856

is also available in chip, Micro-x, and eight different low cost

plastic surface mount package styles.

+0.1

–0.05

+0.1

–0.05

+0.1

–0.05

0.5

3

0.1

0.1

1

2

1.0

+0.1

–0.05

+0.1

–0.05

0.3

0.35

0.35

0.7

0.15

+0.1

–0.05

0.15

0.2

0.2

0.2

0.125

0.5

±0.05

Bottom View

1

2

3