NE688M03

NPN SILICON TRANSISTOR

•

NEW M03 PACKAGE:

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

•

HIGH GAIN BANDWIDTH PRODUCT:

•

LOW NOISE FIGURE:

NF = 1.7 dB at 2 GHz

•

HIGH COLLECTOR CURRENT:

FEATURES

PACKAGE OUTLINE M03

PRELIMINARY DATA SHEET

PART NUMBER

NE688M03

2SC5437

PACKAGE OUTLINE

M03

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

GHz

4

5

GHz

9.5

NF

dB

1.9

2.5

dB

1.7

dB

3

4

dB

8

80

145

µA

0.1

µA

0.1

pF

0.7

0.8

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

California Eastern Laboratories

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

DESCRIPTION

The NE688M03 transistor is designed for low cost amplifier

and oscillator applications. Low noise figure, high gain and high

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/flat lead style "M03" package

is ideal for today's portable wireless applications. The NE688

is also available in chip and six different low cost plastic surface

mount package styles.

1

3

2

1.2±0.05

0.8±0.1

+0.1

-0.05

0.15

1.4 ±0.1

(0.9)

0.59±0.05

0.2±0.1

0.45

0.45

0.3±0.1