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SBT80 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # SBT80
Description  SCHOTTKY BARRIER RECTIFIER DIODES
PDF  2 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

SBT80 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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SBT20 - SBTB0
SCHOTTKY BARRIER
RECTIFIER DIODES
PRV : 20 - 100 Volts
IO : 2.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
SBT
20
SBT
30
SBT
40
SBT
50
SBT
60
SBT
70
SBT
80
SBT
90
SB
TB0
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
70
80
90
100
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
49
56
63
70
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
70
80
90
100
Volts
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
IF(AV)
2.5
Amps.
Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
75
Amps.
Maximum Forward Voltage at IF = 2.5 Amps. (Note 1)
VF
0.5
0.74
0.79
Volt.
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
IR
0.5
mA
Junction Temperature Range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
(1) Pulse Test : Pulse Width = 300
µs, Duty Cycle = 2%.
UPDATE : SEPTEMBER 12, 1998
RATING
D2A
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.161 (4.1)
0.154 (3.9)
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )


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