http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

SMG5402

Ω

Ω

Ω

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

26-Oct-2012 Rev. A

Page 2 of 4

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate-Threshold Voltage

0.5

-

1.5

V

Gate-Body Leakage Current

-

-

nA

Drain-Source Leakage

Current

-

-

1

µA

-

-

25

Drain-Source On-Resistance

-

-

55

m

-

-

70

-

-

110

Forward Transconductance

-

3

-

S

Dynamic

Total Gate Charge

2

-

6

-

nC

Gate-Source Charge

-

1

-

Gate-Drain (‘‘Miller’’) Charge

-

2.8

-

Turn-on Delay Time

2

-

5.8

-

nS

Rise Time

-

9.6

-

Turn-off Delay Time

2

-

14.4

-

Fall Time

-

3.9

-

Input Capacitance

Ciss

-

335

-

pF

f=1.0MHz

Output Capacitance

Coss

-

50

-

Reverse Transfer Capacitance

Crss

-

45

-

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Reverse Recovery Time

2

-

15

-

ns

dI/dt=100A/µs

Reverse Recovery Charge

-

8

-

nC

Notes:

1.

Pulse width limited by Max. junction temperature.

2.

Pulse width≦300us, duty cycle≦2%.

3.

Surface mounted on 1 in2 copper pad of FR4 board; 270°C /W when mounted on Min. copper pad.