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SSG4510 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4510 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 7 page  SSG4510 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V, RDS(ON) 112 mΩ Ω Ω Ω P-Ch: -2.5A, -100 V, RDS(ON) 180 mΩ Ω Ω Ω Elektronische Bauelemente 18-Jun-2012 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4510SS = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4510 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Performance MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit N-Ch P-Ch Drain-Source Voltage VDS 100 -100 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 3 TA=25°C ID 2.5 -2.5 A TA=70°C 2 -2 A Pulsed Drain Current 1 IDM 10 -10 A Total Power Dissipation TA=25°C PD 2 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Data Thermal Resistance Junction-ambient 3 RθJA 62.5 °C / W SOP-8 A H B M D C J K F L E N G REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G G S S D D D D |
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