SSG4536C datasheet(2/2 Pages) SECOS

2 / 2 page

SSG4536C

N-Ch: 7.1A, 30V, RDS(ON) 28 mΩ

Ω

P-Ch: -6A, -30V, RDS(ON) 39 mΩ

Ω

N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

12-Sep-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol Ch

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

-1

VDS=VGS, ID= -250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS=20V

±100

VDS=0, VGS= -20V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=24V, VGS=0

-1

VDS= -24V, VGS=0

On-State Drain Current

ID(on)

VDS=5V, VGS=10V

-20

VDS= -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=7.1A

VGS=4.5V, ID=5.8A

VGS= -10V, ID= -6A

VGS= -4.5V, ID= -4.9A

Forward Transconductance

gfs

VDS=15V, ID=6.9A

VDS= -15V, ID= -5.2A

Dynamic

Total Gate Charge

N-Channel

ID=6.9A, VDS=15V, VGS=10V

P-Channel

ID= -5.2A, VDS= -15V, VGS= -10V

Gate-Source Charge

Qgs

1.1

2.2

Gate-Drain(“Miller”) Charge

Qgd

1.4

1.7

Turn-On Delay Time

Td(on)

N-Channel

VDD=15V, VGS=10V

ID=1A, RGEN=6

P-Channel

VDD= -15V, VGS= -10V

ID= -1A, RGEN= 6

Rise Time

2.8

Turn-Off Delay Time

Td(off)

53.6

Fall Time

Notes

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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