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QST3 Datasheet(PDF) 2 Page - Rohm

Part # QST3
Description  PNP -5A -30V Middle Power Transistor
PDF  7 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

QST3 Datasheet(HTML) 2 Page - Rohm

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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
QST3
lAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Pulsed
Junction temperature
Range of storage temperature
*1 Pw=1ms , single pulse
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (25×25×0.8 mm)
lElectrical characteristics (Ta = 25°C)
Collector-base
breakdown voltage
BVCBO
IC = -10mA
-30
-
150
°C
Tstg
-
V
Tj
Collector-emitter
breakdown voltage
BVCEO
IC = -1mA
-30
-
-
V
Parameter
Symbol
Conditions
Min.
Typ.
Emitter-base
breakdown voltage
BVEBO
IE = -10mA
-6
-
-
V
-100
nA
Emitter cut-off current
IEBO
VEB = -6V
-
-
-100
nA
Collector cut-off current
ICBO
VCB = -30V
-
-
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0A
f = 1MHz
-
60
-
pF
Transition frequency
fT
VCE = -2V, IE = 500mA
f=100MHZ
-
200
-250
mV
DC current gain
hFE
VCE = -2V, IC = -500mA
270
-
680
-
Collector-emitter
saturation voltage
VCE(sat)
IC = -2A, IB = -40mA
-
-170
Max.
Unit
500
mW
1.25
W
VCEO
-30
V
VEBO
ICP
*1
PD
*2
PD
*3
-6
V
-55 to +150
°C
IC
-5.0
A
-8.0
A
Parameter
Symbol
Values
Unit
VCBO
-30
V
Collector current
Power dissipation
2/6
2013.05 - Rev.C



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