DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

NE68539 / 2SC4957

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN MINIMOLD

The mark shows major revised points.

Document No. PU10520EJ01V0DS (1st edition)

(Previous No. P10379EJ2V0DS00)

Date Published September 2004 CP(K)

FEATURES

• Low Noise, High Gain

• Low Voltage Operation

• Low Reverse Transfer Capacitance

• 4-pin minimold Package

ORDERING INFORMATION

m

r

o

F

g

ni

yl

p

p

u

S

yt

it

n

a

u

Q

r

e

b

m

u

N

tr

a

P

2SC4957

50 pcs (Non reel)

2SC4957-T1

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

9

V

Collector to Emitter Voltage

6

V

Emitter to Base Voltage

2

V

I

t

n

e

rr

u

C

r

o

tc

el

lo

C

C

30

mA

Total Power Dissipation

180

mW

Junction Temperature

150

°

C

Storage Temperature

−

65 to +150

°

C

Note Free air