SST4416 datasheet(3/7 Pages) VISHAY

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2N4416/2N4416A/SST4416

Vishay Siliconix

Document Number: 70242

S-04028—Rev. F, 04-Jun-01

www.vishay.com

7-3

HIGHFREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)

Limits

100 MHz

400 MHz

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Unit

Common Source Input Conductance

giss

100

1,000

Common Source Input Susceptance

biss

2,500

10,000

Common Source Output Conductance

goss

VDS = 15 V, VGS = 0 V

100

Common Source Output Susceptance

boss

1,000

4,000

Common Source Forward Transconductance

gfs

4,000

Common-Source Power Gain

Gps

VDS = 15 V, ID = 5 mA

Noise Figure

RG = 1 kW

Notes

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Pulse test: PW

v300 ms duty cycle v3%.

This parameter not registered with JEDEC.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

rDS

gos

rDS @ ID = 1 mA, VGS = 0 V

gos @ VDS = 10 V, VGS = 0 V

f = 1 kHz

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

IDSS

gfs

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 V

f = 1 kHz

VGS(off) – Gate-Source Cutoff Voltage (V)

–10

–2

–4

–6

–8

100

500

400

300

200

100

–10

–2

–4

–6

–8

VDS – Drain-Source Voltage (V)

Output Characteristics

010

VGS(off) = –2 V

VGS(off) = –3 V

–0.2 V

–0.4 V

–0.6 V

–0.8 V

–1.2 V

–1.0 V

VGS = 0 V

–0.6 V

–0.9 V

–1.2 V

–1.5 V

–1.8 V

VGS = 0 V

–0.3 V

VGS(off) – Gate-Source Cutoff Voltage (V)

–1.4 V

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