MJE340 datasheet(1/3 Pages) CDIL

Part #	MJE340

Description	NPN EPITAXIAL SILICON POWER TRANSISTOR

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN EPITAXIAL SILICON POWER TRANSISTOR

MJE340

TO126

Plastic Package

For use in High Voltage General Purpose Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

Collector Emitter Voltage

VCEO

V

Collector Base Voltage

VCBO

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

mA

Power Dissipation @ Ta=25ºC

PD

W

Derate above 25ºC

mW/ºC

Power Dissipation @ Tc=25ºC

PD

W

Derate above 25ºC

W/ºC

Operating And Storage Junction

Temperature Range

Tj, Tstg

ºC

THERMAL CHARACTERISTICS

Junction to Ambient in free air

Rth (j-a)

ºC/W

Junction to Case

Rth (j-c)

ºC/W

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MAX

UNIT

Collector Emitter Sustaining Voltage

*VCEO (sus)

IC=1mA, IB=0

V

Collector Cut Off Current

ICBO

VCB=300V, IE=0

100

µA

Emitter Cut Off Current

IEBO

VEB=3V, IC=0

100

µA

DC Current Gain

hFE

IC=50mA, VCE=10V

240

0.16

- 65 to +150

300

500

1.25

10

20

VALUE

300

3.0

100

6.25

MIN

30

B

C

E

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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