CSC3619 datasheet(1/2 Pages) CDIL

Part #	CSC3619

Description	NPN SILICON PLASTIC POWER TRANSISTOR

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN SILICON PLASTIC POWER TRANSISTOR

CSC3619

TO-126

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

300

V

Collector -Emitter Voltage

VCEO

300

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

100

mA

Collector Power Dissipation @ Ta=25 deg C

Ptot

1.5

W

Collector Power Dissipation @ Tc=45 deg C

Ptot

10

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

THERMAL RESISTANCE

Junction to Ambient

Rth (j-a)

83.3

K/W

Junction to Case

Rth (j-c)

10.5

K/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Base Voltage

VCBO

IC=0.1A, IE=0

300

-

V

Collector Emitter Voltage

VCEO

IC=10mA, IB=0

300

-

V

Emitter Base Voltage

VEBO

IE=1mA, IC=0

5.0

-

V

Collector Cut off Current

ICBO

VCB=240V, IE=0

-

1.0

uA

DC Current Gain

hFE

IC=20mA, VCE=10V

30

-

200

Collector Emitter Saturation Voltage

VCE(Sat) IC=10mA,IB=1mA

-

1.0

V

Base Emitter Saturation Voltage

VBE(Sat) IC=10mA,IB=1mA

-

1.0

V

Dynamic Characteristics

Collector Output Capacitance

Cob

VCB=30V, IE=0

-

3.0

-

pF

f=1MHz

Transition Frequency

ft

VCE=10V, IC=20mA

50

-

MHz

Continental Device India Limited

Data Sheet

Page 1 of 2

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C

E

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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