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CSA1156 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CSA1156 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  PNP EPITAXIAL SILICON POWER TRANSISTOR CSA1156 TO-126 Plastic Package High Voltage Switching and Low Power Switching Regulator ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNIT Collector Base Voltage VCBO V Collector Emitter Voltage VCEO V Emitter Base Voltage VEBO V Base Current IB A Collector Current (DC) IC A Collector Current (Pulse) ICP A Collector Dissipation Ta=25ºC PC W Collector Dissipation Tc=25ºC PC W Junction Temperature Tj ºC Storage Temperature Range Tstg ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 V Collector Emitter Voltage VCEX IC=1mA, IB1= - IB2= -20mA, VBE(off) = 5V, L=10mH V Collector Cut Off Current ICBO VCB=350V, IE=0 100 µA Emitter Cut off Current IEBO VEB=5V, IC=0 10 µA Collector Cut Off Current ICEX1 VCE=350V, VBE(off) =1.5V 100 µA Collector Cut Off Current ICEX2 VCE=350V, VBE(off) =1.5V, TC=125ºC 1.0 mA *DC Current Gain hFE IC=100mA, VCE=5V 200 Collector Emitter Saturation Voltage VCE (sat) IC=100mA, IB=10mA 1.0 V Base Emitter Saturation Voltage VBE (sat) IC=100mA, IB=10mA 1.2 V SWITCHING TIME Turn On Time ton 1.0 µs Storage Time tstg 4.0 µs Fall Time tf 1.0 µs hFE Classification CSA1156Rev220907E 30 - 55 to +150 VCC=150V, IC=100mA, IB1= - 10mA,1B2=20mA, RL=1.5KΩ N : 30 - 60 R : 40 - 80 O : 60 - 120 Y : 100 - 200 MIN 350 350 Value 350 350 7.0 0.25 150 10 0.5 1.0 1.0 B C E Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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