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CP755 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CP755 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 5 page ![]() PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP754 / CP755 TO-92 Plastic Package Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and Audio Amplifier Complementary CN654 and CN655 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC ) DESCRIPTION CP755 UNIT Collector Base Voltage 150 V Collector Emitter Voltage 150 V Emitter Base Voltage V Peak Pulse Current A Collector Current Continuous A Power Dissipation @ Ta=25ºC W Derate Above 25ºC mW/ºC Power Dissipation @ Ta=25ºC W Power Dissipation @ TC=25ºC W Operating and Storage Junction Temperature Range ºC Thermal Resistance Junction to Ambient ºC/W Junction to Ambient ºC/W Junction to Case ºC/W * Consult safe operating area graph for conditions. **Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min 10mm x 10 mm, copper 2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Base Voltage VCBO IC=100µA, IE=0 CP754 125 V CP755 150 V Collector Emitter Voltage VCEO IC=1mA, IB=0 CP754 125 V CP755 150 V Emitter Base Voltage VEBO IE=100µA, IC=0 5.0 V Collector Cut Off Current ICBO VCB=100V, IE=0 CP754 100 nA VCB=125V, IE=0 CP755 100 nA Emitter Cut Off Current IEBO VEB=3V, IC=0 100 nA CP754_755Rev_2 211204E Tj, Tstg Rth (j-a) 1 SYMBOL VCBO VCEO VEBO PD CP754 2.2 - 65 to +150 125 125 0.9 7.2 1.1 **PD 5 2 1 56.8 PD Rth (j-c) *ICM IC 138.8 Rth (j-a) 2+ 113.6 E B C Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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