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CJF6668 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # CJF6668
Description  PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CJF6668 Datasheet(HTML) 2 Page - Continental Device India Limited

  CJF6668 Datasheet HTML 1Page - Continental Device India Limited CJF6668 Datasheet HTML 2Page - Continental Device India Limited CJF6668 Datasheet HTML 3Page - Continental Device India Limited CJF6668 Datasheet HTML 4Page - Continental Device India Limited  
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PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR
CJF6668
TO-220FP Fully Isolated
Plastic Package
ELECTRICAL CHARACTERISTICS (T
c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Collector Emitter sustaining Voltage
VCEO (sus) *IC=30mA, IB=0
100
V
Collector Cut off Current
ICEO
VCE=80V, IB=0
10
µA
ICEX
VCE=100V, VEB(off)=1.5V
10
µA
TC=125ºC
VCE=100V, VEB(off)=1.5V
3mA
ICBO
VCB=100V, IE=0
10
µA
Emitter Cut off Current
IEBO
VEB=5V, IC=0
2mA
DC Current Gain
hFE *IC=3A, VCE=4V
3000
15000
IC=5A, VCE=3V
1000
IC=8A, VCE=4V
200
IC=10A, VCE=3V
100
Collector Emitter Saturation Voltage
VCE(Sat) *IC=3A, IB=6mA
2V
IC=5A, IB=0.01A
2V
IC=8A, IB=80mA
2.5
V
IC=10A, IB=0.1A
3V
Base Emitter Saturation Voltage
VBE(Sat) *IC=5A, IB=0.01A
2.8
V
IC=10A, IB=0.1A
4.5
V
Base Emitter on Voltage
VBE(on) *IC=8A, VCE=4V
2.5
V
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
IhfeIIC=1A, VCE=5V, f=1MHz
20
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
300
pF
Small Signal Current Gain
hfe
IC=1A,VCE=5V, f=1kHz
1000
* Pulse Test: Pulse Width <300
µs, Duty Cycle <2 %
Continental Device India Limited
Data Sheet
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