PNP SILICON EPITAXIAL TRANSISTOR

CIL9359

TO-237

BCE

PNP Vertical Retrace Switching Transistor

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

40

V

Collector -Emitter Voltage

VCEO

40

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC

2.0

A

Peak

IC

3.0

A

Power Dissipation

PD

900

mW

Junction Temperature Range

TJ

-65 to +150

deg C

Lead Soldering, 1/16" from body ,10sec

TL

280

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO*

IC=10mA, IB=0

40

-

-

V

Emitter Base Voltage

VEBO

IE=10uA, IC=0

5.0

-

-

V

Collector Cut off Current

ICBO

VCB=40V, IE=0

-

-

50

nA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

-

-

100

nA

DC Current Gain

hFE

IC=10mA,VCE=10V

100

-

400

IC=1.5A,VCE=10V*

40

-

-

Collector Emitter Saturation Voltage

VCE(Sat) * IC=1A,IB=100mA

-

-

1.0

V

Forward Emitter on Base Voltage

VEB(F) *

IC=1A, VCE=1V

-

-

1.2

V

Switching Time

Turn on Time

ton

VCC=30V,VEB(off)=

-

-

150

ns

3.8V, IC=500mA, IB1=

50mA

Turn off Time

toff

VCC=30V, IC=500mA

-

-

800

ns

IB1=1B2=50mA

*Pulse Test : Pulse Width =300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

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