CDR02

TO-126

Thyristor Series

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Test condition

peak repetitive off-stage voltage

>600

V

on-state RMS current

4

A

average on-state current

2

A

NON repetitive surge peak on-state current

20

A

Φ=180ºC

critical rate of rise on-state current

dI/dt

50

A/

µs

peak gate current

0.2

A

average gate power dissipation

0.1

W

storage temperature range

Tstg

-40 to +150

operating junction temperature range

Tj

125

Electrical characteristics ( Tj=25ºC) unless otherwise specified

Parameter

Symbol

Value

Unit

Test condition

gate trigger current

10-200

µA

gate trigger voltage

<0.8

V

hold current

<3.0

mA

critical rate of rise off-state voltage

dv/dt

>10

V/

µs

on-state voltage

<2.2

V

off-state leakage current

<10

µA

Tj=125

Rth(j-a)

<10

Rth(j-mb)

<75

CDR02 Rev_1 021209E

Disclaimer

thermal resistance

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your

product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality

parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL

however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of

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resulting from such sale(s).

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Data Sheet

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