NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR

CD2328A

TO-92

BCE

3W AUDIO Output Amplifier Application.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

30

V

Collector -Emitter Voltage

VCEO

30

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

1.5

A

Peak

ICM

2.0

A

Power Dissipation

PD

0.75

W

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

30

-

-

V

Collector -Base Voltage

VCBO

IC=100uA, IE=0

30

-

-

V

Emitter Base Voltage

VEBO

IE=1mA, IC=0

5.0

-

-

V

Collector Cut off Current

ICBO

VCB=30V, IE=0

-

-

100

nA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

100

nA

DC Current Gain

hFE*

IC=500mA,VCE=2V

100

-

320

Collector Emitter Saturation Voltage

VCE(Sat) * IC=1.5A, IB=30mA

-

-

2.0

V

Base Emitter on Voltage

VBE(on)*

IC=500mA, VCE=2V

-

-

1.0

V

Dynamic Characteristics

Output Capacitance

Cob

VCB=10V, IE=0

-

30

-

pF

f=1MHz

-

48

-

pF

Gain Bandwidth Product

ft

VCE=2V,IC=500mA,

-

120

-

MHz

CLASSIFICATION

O

Y

hFE *

100-200

160-320

*Pulse Test : Pulse Width =300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

E C

B

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company