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CD1207 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CD1207
Description  NPN EPITAXIAL PLANAR SILICON TRANSISTOR
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CD1207 Datasheet(HTML) 1 Page - Continental Device India Limited

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NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CD1207
TO-92L
Plastic Package
High Cureent Switching Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )
DESCRIPTION
SYMBOL
UNITS
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current
IC
A
Peak Collector Current
ICP
A
Collector Power Dissipation
PC
W
Junction Temperature
Tj
ºC
Storage Temperature
Tstg
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Base Voltage
VCBO
IC=10µA, IE=0
60
V
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
50
V
Emitter Base Voltage
VEBO
IE=10µA, IC=0
6
V
Collector Cut Off Current
ICBO
VCB =50V, IE=0
100
nA
Emitter Cut Off Current
IEBO
VEB=4V, IC = 0
100
nA
DC Current Gain
*hFE
IC =100mA, VCE=2V
100
560
hFE
IC =1.5A, VCE=2V
40
Collector Emitter Saturation Voltage
VCE (sat)
IC=1A, IB=50mA
0.4
V
Base Emitter Saturation Voltage
VBE (sat)
IC=1A, IB=50mA
1.2
V
DYNAMIC CHARACTERISTICS
Transition Frequency
fT
VCE=10V, IC=50mA
150
MHz
Output Capacitance
Cob
VCB=10V,IE=0, f=1MHz
12
pF
CLASSIFICATION
R
S
*hFE
100 - 200
140 - 280
CD1207Rev140205E
VALUE
60
50
6
2
1
150
4
- 55 to +150
280 - 560
U
200 - 400
T
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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