2N6728 datasheet(1/3 Pages) CDIL

Part #	2N6728

Description	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR

2N6728

TO-237

Plastic Package

General Purpose Medium Power Amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

60

V

Emitter Base Voltage

VEBO

5V

Collector Current Continuous

IC

1A

Total Device Dissipation@ Ta=25ºC

PD

850

mW

Operating and Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=10mA, IB=0

60

V

Collector -Base Voltage

VCBO

IC=100µA, IE=0

60

V

Emitter-Base Voltage

VEBO

IE=10µA, IC=0

5

V

Collector Cut off Current

ICBO

VCB=40V, IE=0

0.1

µA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

0.1

µA

DC Current Gain

hFE

IC=50mA,VCE=1V

80

IC=250mA,VCE=1V

50

250

IC=500mA,VCE=1V

20

Collector Emitter Saturation Voltage

VCE(sat)

IC=250mA,IB=25mA

0.35

V

Transition Frequency

fT

VCE=10V, IC=50mA,

50

MHz

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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