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2N6516 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # 2N6516
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  5 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

2N6516 Datasheet(HTML) 2 Page - Continental Device India Limited

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N6515, 2N6519
2N6516, 2N6520
2N6517
TO-92
Plastic Package
DESCRIPTION
SYMBOL TEST CONDITION
MIN
MAX
UNIT
Collector Cut off Current
ICBO
2N6515
VCB =150V, IE=0
50
nA
2N6516, 6519
VCE=200V, IE=0
50
nA
2N6517, 6520
VCE=250V, IE=0
50
nA
Emitter Cut off Current
IEBO
NPN
VEB=5V, IC=0
50
nA
PNP
VEB=4V, IC = 0
50
nA
DC Current Gain
µA
hFE*VCE=10V,IC=1mA
2N6515
35
2N6516, 6519
30
2N6517, 6520
20
2N6515
VCE=10V,IC=10mA
50
2N6516, 6519
45
2N6517, 6520
30
2N6515
VCE=10V,IC=30mA
50
300
2N6516, 6519
45
270
2N6517, 6520
30
200
2N6515
VCE=10V,IC=50mA
45
220
2N6516, 6519
40
200
2N6517, 6520
20
200
2N6515
VCE=10V,IC=100mA
25
2N6516, 6519
20
2N6517, 6520
15
Base Emitter Saturation Voltage
VBE(sat)* IC=10mA,IB=1mA
0.75
V
IC=20mA,IB= 2mA
0.85
V
IC=30mA,IB= 3mA
0.90
V
Collector Emitter Saturation Voltage
VCE(sat)* IC=10mA,IB=1mA
0.3
V
IC=20mA,IB=2mA
0.35
V
IC=30mA,IB=3mA
0.50
V
IC=50mA,IB=5mA
1.0
V
Base Emitter on Voltage
VBE (on)* IC=100mA, VCE=10V
2.0
V
Continental Device India Limited
Data Sheet
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