2N6109 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current (Peak value)

max.

10 A

Base current

max.

3.0 A

Total power dissipation up to TC = 25°C

Ptot

max.

40 W

Derate above 25°C

max.

0.32 W/°C

Junction temperature

max.

150 ºC

Storage temperature

Tstg

–65 to +150 ºC

THERMAL CHARACTERISTICS

From junction to case

Rth j–c

3.125 °C/W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

Collector cutoff current

IB = 0; VCE = 40V

ICEO

max.

1.0 mA

VEB(off) = 1.5V; VCE = 60V

ICEX

max.

0.1 mA

VEB(off) = 1.5V; VCE = 50V; TC = 150°C

ICEX

max.

2.0 mA

Emitter cut-off current

IC = 0; VEB = 5V

IEBO

max.

1.0 mA

Breakdown voltages

IC = 100 mA; IB = 0

VCEO(sus)*

min.

50 V

IC = 1 mA; IE = 0

VCBO

min.

60 V

IE = 1 mA; IC = 0

VEBO

min.

5.0 V

Saturation voltages

IC = 2.5 A; IB = 0.25 A

VCEsat*

max.

1.0 V

IC = 7 A; IB = 3 A

VCEsat*

max.

3.5 V

Base emitter on voltages

IC = 2.5A; VCE = 4V

VBE(on)*

max.

1.5 V

IC = 7A; VCE = 4V

VBE(on)*

max.

3.0 V

D.C. current gain

IC = 2.5A; VCE = 4V

hFE*

min.

max.

150

IC = 7A; VCE = 4V

hFE*

min.

2.3

Small-signal current gain f = 50 KHz

IC = 0.5A; VCE = 4V

hfe

min.

Output capacitance at f = 1 MHz

IE = 0; VCB = 10V

max.

250 pF

Transition frequency at f = 1 MHz

IC = 500 mA; VCE = 4V

fT (1)

min.

10 MHz

* Pulse test: pulse width

≤ 300 µs; duty cycle ≤ 2%.

(1) fT = |hfe|• ftest

2N6109

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