e

1

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

40

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage (collector open)

4.0

Vdc

Collector Current (continuous)

1.7

Adc

Total Device Dissipation at Tflange = 25°C

35

Watts

Above 25°C derate by

0.2

W/°C

Storage Temperature Range

T

STG

–40 to +150

°C

Thermal Resistance (Tflange = 70°C)

5.0

°C/W

PTB 20003

4 Watts, 915–960 MHz

Cellular Radio RF Power Transistor

Description

The 20003 is a class AB, NPN, common emitter RF power transistor

intended for 25 Vdc operation across the 915 to 960 MHz frequency

band. Rated at 4 Watts minimum output power, it may be used for

both CW and PEP applications. Ion implantation, nitride surface

passivation and gold metallization are used to ensure excellent device

reliability. 100% lot traceability is standard.

0

2

4

6

8

10

12

0.00

0.15

0.30

0.45

0.60

0.75

Input Power (Watts)

f = 960 MHz

Typical Output Power vs. Input Power

Package 20201

20003

20003

20003

20003

20003

LOT

CODE

9/28/98