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PTB20007 Datasheet(PDF) 1 Page - Ericsson |
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PTB20007 Datasheet(HTML) 1 Page - Ericsson |
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1 / 3 page ![]() e 1 PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 10 Adc Total Device Dissipation at Tflange = 25°C PD 175 Watts Above 25°C derate by 1.0 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.0 °C/W 20007 LOT CODE Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated Package 20200 0 10 20 30 40 50 60 02468 10 Input Power (Watts) VCC = 24 V ICQ = 200 mA f = 960 MHz Typical Output Power vs. Input Power 9/28/98 |
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