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2N6491 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # 2N6491
Description  PLASTIC POWER TRANSISTORS
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

2N6491 Datasheet(HTML) 2 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
IC
max.
15
A
Base current
IB
max.
5.0
A
Total power dissipation up to TC = 25°C Ptot
max.
75
W
Derate above 25°C
max.
0.6
W/°C
Total power dissipation up to TA = 25°C Ptot
max.
1.8
W
Derate above 25°C
max.
0.014
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
°C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
70
°C/W
From junction to case
Rth j–c
1.67
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
6486 6487 6488
6489 6490 6491
Collector cutoff current
IB = 0; VCE = 20 V
ICEO
max. 1.0
mA
IB = 0; VCE = 30 V
ICEO
max. –
1.0
mA
IB = 0; VCE = 40 V
ICEO
max. –
1.0 mA
VEB(off) = 1.5 V; VCE = 45 V
ICEX
max.500
µA
VEB(off) = 1.5 V; VCE = 65 V
ICEX
max. –
500
µA
VEB(off) = 1.5 V; VCE = 85 V
ICEX
max. –
500 µA
VEB(off) = 1.5 V; VCE = 40 V; TC=150°C ICEX
max. 5.0
mA
VEB(off) = 1.5 V; VCE = 60 V; TC=150°C ICEX
max. –
5.0
mA
VEB(off) = 1.5 V; VCE = 80 V; TC=150°C ICEX
max. –
5.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
1.0
mA
Breakdown voltages
IC = 200 mA; IB = 0
VCEO(sus)*
min. 40
60
80
V
IC = 1 mA; IE = 0
VCBO
min. 50
70
90
V
IC = 200 mA; VBE = 1.5 V
VCEX(sus)*
min. 50
70
90
V
IE = 1 mA; IC = 0
VEBO
min.
5.0
V
Saturation voltages
IC = 5 A; IB = 0.5 A
VCEsat*
max.
1.3
V
IC = 15 A; IB = 5 A
VCEsat*
max.
3.5
V
Base-emitter on voltage
IC = 5 A; VCE = 4 V
VBE(on)*
max.
1.3
V
IC = 15 A; VCE = 4 V
VBE(on)*
max.
3.5
V
D.C. current gain
IC = 5 A; VCE = 4 V
hFE*
min.
20
max.
150
IC = 15 A; VCE = 4 V
hFE*
min.
5.0
Transition frequency
IC = 1 A; VCE = 4 V; f = 1 MHz
fT(1)
min.
5.0
MHz
Small signal current gain
IC = 1.0A; VCE = 4V; f = 1.0 KHz
hfe
min.
25
* Pulse test: pulse width
≤ 300 µs; duty cycle ≤ 2%
(1) fT = |hfe|• ftest
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491



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