PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

2N5401

TO-92

CBE

High Voltage PNP Transistor For General Purpose And Telephony Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

150

V

Collector -Base Voltage

VCBO

160

V

Emitter -Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

600

mA

Power Dissipation @Ta=25 degC

PD

625

mW

Derate Above 25 deg C

5.0

mw/deg C

Power Dissipation @Tc=25 degC

PD

1.5

W

Derate Above 25 deg C

12

mw/deg C

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

83.3

deg C/W

Junction to Ambient

Rth(j-a)

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO*

IC=1mA,IB=0

150

-

-

V

Collector -Base Voltage

VCBO

IC=100uA.IE=0

160

-

-

V

Emitter -Base Voltage

VEBO

IE=10uA, IC=-0

5.0

-

-

V

Collector-Cut off Current

ICBO

VCB=160V, IE=0

-

-

50

nA

Ta=100 deg C

VCB=160V, IE=0

-

-

50

uA

Emitter-Cut off Current

IEBO

VEB=4V, IC=0

-

-

50

nA

DC Current Gain

hFE*

IC=1mA,VCE=5V

50

-

-

IC=10mA,VCE=5V

60

-

240

IC=50mA,VCE=5V

50

-

-

Collector Emitter Saturation Voltage

VCE(Sat)* IC=10mA,IB=1mA

-

-

0.2

V

IC=50mA,IB=5mA

-

-

0.5

V

Base Emitter Saturation Voltage

VBE(Sat) * IC=10mA,IB=1mA

-

-

1.0

V

IC=50mA,IB=5mA

-

-

1.0

V

Continental Device India Limited

Data Sheet

Page 1 of 3

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Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company