2N5232 datasheet(1/4 Pages) CDIL

Part #	2N5232

Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	4 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N5232

2N5232A

TO-92

Plastic Package

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector Emitter Voltage

VCEO

50

V

Collector Base Voltage

VCBO

70

V

Emitter Base Voltage

VEBO

5V

Collector Current

IC

100

mA

Power Dissipation @ Ta=25ºC

PT

(1)

360

mW

Storage Temperature

Tstg

- 55 to +150

ºC

Junction Temperature

Tj

+125

ºC

Lead Soldering, 1/16" + 1/32" from

TL

+260

ºC

Case for 10 seconds maximum

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Emitter Voltage

BVCEO**

IC=10mA, IB=0

50

V

Collector Base Voltage

BVCBO

IC=10µA, IE=0

70

V

Emitter Base Voltage

BVEBO

IE=10µA, IC=0

5V

Collector Cut

Off Current

ICBO

VCB=50V, IE = 0

30

nA

Ta= 100ºC

VCB=50V, IE = 0

10

µA

Collector Cut

Off Current

ICES

VCE=50V, VBE = 0

30

nA

Emitter Cut

Off Current

IEBO

VEB=5V, IC = 0

50

nA

Collector Emitter Saturation Voltage

VCE(sat)

(2)

IC=10mA, IB=1mA

0.125

V

Base Emitter Saturation Voltage

VBE(sat)

(2)

IC=10mA, IB=1mA

0.780

V

Base Emitter

On Voltage

VBE(on)

VCE=10V, IC=2mA

0.5

0.900

V

DC Current Gain

hFE

VCE=5V, IC=0.1mA

170

(3)

VCE=5V, IC=2mA

250

500

(1) Derate by 3.6mW/ºC in case of increase in ambient temperature above 25ºC

(2) Pulse conditions: 300

µs duration, 2% duty cycle.

(3)Typically, a minimum of 95% of the distribution is above this value.

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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