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2N5172 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N5172 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO 25 V Collector Base Voltage VCBO 25 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 100 mA Power Dissipation @ Ta=25ºC PD 625 mW Derate Above 25ºC 5 mW/ºC Power Dissipation @ Tc=25ºC PD 1.5 W Derate Above 25ºC 12 mW/ºC Operating And Storage Junction Tj, Tstg - 55 to +150 ºC Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 200 ºC/W Junction to Case Rth(j-c) 83.3 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Voltage VCEO IC=10mA,IB=0 25 Collector Cut Off Current ICBO VCB=25V, IE=0 100 nA VCB=25V,IE=0,Ta=100ºC 10 µA Collector Cut Off Current ICES VCE =25V, VBE=0V 100 nA Emitter Cut Off Current IEBO VEB=5V, IC = 0 100 nA DC Current Gain hFE VCE=10V,IC=10mA 100 500 Collector Emitter Saturation Voltage VCE(sat) IC=10mA,IB=1mA 0.25 V Base Emitter Saturation Voltage VBE(sat) IC=10mA,IB=1mA 0.75 V Base Emitter On Voltage VBE(on) VCE=10V,IC=10mA 0.5 1.2 V DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT IC=2mA, VCE=5V 120 MHz Collector Base Capacitance CCb IE=0, VCB=0V,f=1MHz 1.6 10 pF Small Signal Current Gain hfe VCE =10V,IC=10mA 100 750 f=1kHz Continental Device India Limited Data Sheet Page 1 of 3 E C B Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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